| 发明名称 |
BORON PHOSPHIDE BASED SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable the stable formation of a p-type ohmic electrode having a sufficiently low contact resistance on a boron phosphide based semiconductor layer. <P>SOLUTION: A boron phosphide based semiconductor device 10 (11) comprises at least a p-type boron phosphide system semiconductor layer 104 and a p-type ohmic electrode 105 formed thereon, wherein the p-type ohmic electrode 105 is formed of an alloy of nickel and boron. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005294812(A) |
申请公布日期 |
2005.10.20 |
| 申请号 |
JP20050061866 |
申请日期 |
2005.03.07 |
| 申请人 |
SHOWA DENKO KK |
发明人 |
ODAWARA MICHIYA;UDAGAWA TAKASHI |
| 分类号 |
H01L21/28;H01L33/06;H01L33/32;H01L33/34;H01L33/40 |
主分类号 |
H01L21/28 |
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