| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the photoelectric conversion efficiency of a photovoltaic power element using an amorphous silicon after the photodegradation of the photovoltaic power element. <P>SOLUTION: A photovoltaic power element includes at least one set of a pin junction containing a polycrystal which uses an Si as a main constituting element, a microcrystal or an amorphous semiconductor in an i layer. In the photovoltaic power element, the initial photoelectric conversion efficiency of the photovoltaic power element is reduced by 2 to 9% by a diode leakage current. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
