| 摘要 |
PROBLEM TO BE SOLVED: To provide a SRAM (Static Random Access Memory) cell capable of performing reading and writing operations simultaneously without collision while reducing a size of cell, by providing a dual port SRAM cell constituted of six transistors. SOLUTION: This SRAM cell is constituted of: a writing section having one 1st transistor for inputting a data input signal from a bit line BL in response to a control signal from a word line WL; a data storage section having three transistors for storing and maintaining data inputted from the outside through the writing section; and a reading section having two transistors for outputting the data stored in the data storage section in response to a control signal from a common line C. COPYRIGHT: (C)2006,JPO&NCIPI
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