发明名称 |
Novel development hastened stability of titanium nitride for APM etching rate monitor |
摘要 |
A method of fabricating a stabilized TiN control wafer comprising the following steps. A silicon substrate is provided having a silicon oxide layer formed thereover. An initial TiN layer is formed over the silicon oxide layer. The silicon substrate is placed in an atmosphere having ambient oxygen for from about 22 to 26 hours to form a rested TiN layer. The rested TiN layer is heated at a temperature of from about 115 to 125° C. for from about 85 to 95 seconds to form a heat treated TiN layer, whereby the heat treated TiN layer is stabilized to form the stabilized TiN control wafer.
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申请公布号 |
US2005233481(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050157571 |
申请日期 |
2005.06.21 |
申请人 |
LIN YEN-FEI;SUN YUEH-MAO;WEN WEI-JEN |
发明人 |
LIN YEN-FEI;SUN YUEH-MAO;WEN WEI-JEN |
分类号 |
G01R31/26;H01L21/321;H01L21/469;(IPC1-7):H01L21/469 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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地址 |
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