发明名称 |
Semiconductor device and manufacturing method thereof, integrated circuit, electro-optic device, and electronic equipment |
摘要 |
Exemplary embodiments of the invention provide techniques that enable avoidance of the concentration of an electric field at the edge of a semiconductor film in a semiconductor device such as a thin film transistor, thereby enhancing the reliability. Exemplary embodiments provide a method of manufacturing a semiconductor device using a structure in which a semiconductor film, a dielectric film, and an electrode are deposited. The method of manufacturing a semiconductor device includes: forming an island-shape semiconductor film on one dielectric surface of a substrate, the substrate having at least one dielectric surface; forming a first dielectric film on the one surface of the substrate so as to cover the semiconductor film and have a film thickness of the portion other than over the semiconductor film equal to or larger than that of the semiconductor film; reducing a film thickness of the first dielectric film at least in a region over the semiconductor film; and forming an electrode so as to be on the first dielectric film after reduction of the film thickness and pass over a predetermined location of the semiconductor film.
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申请公布号 |
US2005233575(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050088973 |
申请日期 |
2005.03.24 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
ABE DAISUKE |
分类号 |
H01L51/50;H01L21/20;H01L21/28;H01L21/304;H01L21/336;H01L21/76;H01L21/762;H01L27/12;H01L29/49;H01L29/78;H01L29/786;H05B33/14;(IPC1-7):H01L21/28 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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