| 摘要 |
The present invention provides a method that can prevent an anti-diffusion film from being formed defectively on a porous dielectric film due to pores in method for forming metal wires in a semiconductor device in which the porous dielectric film is used as an insulating film between metal wires. The method includes forming a porous dielectric film on a semiconductor substrate as an insulating film between metal wires, selectively etching the porous dielectric film to form an aperture defining a metal wire region, infiltrating sealing particles into pores of the porous dielectric film exposed on the sidewall of the aperture, implementing an annealing process for agglomerating the sealing particles to seal the entrances of the pores of the porous dielectric film exposed on the sidewall of the aperture, forming an anti-diffusion film at the bottom and on the sidewall of the aperture, forming a metal film on the anti-diffusion film, and polishing the metal film and the anti-diffusion film until the top of the porous dielectric film is formed to metal wires within the aperture.
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