WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT OBTAINED FROM THE WAFER

摘要

A nitride semiconductor light emitting element formed on a crystalline substrate, such as a GaN substrate, an Al2O3 substrate and a ZrB2 substrate, having an element yield of 80% or more and a high reliability, and an element wafer therefor. The wafer for the nitride semiconductor light emitting element is provided by reducing the wafer thickness by polishing the rear plane of the substrate by employing at least chemical mechanical polishing. The wafer for the nitride semiconductor light emitting element has a wafer thickness d of 145mum or less in a direction vertical to the substrate plane and a substrate plane warp curvature radius R of 0.5m or more, or has a polishing strain layer thickness of 5mum or less due to chemical mechanical polishing on the substrate rear plane.