| 摘要 |
PROBLEM TO BE SOLVED: To realize a manufacturing method for TFT substrate in which Al of a source electrode or the like does not elute at the time of etching of a pixel electrode. SOLUTION: A TFT substrate for a liquid crystal display device includes a transparent substrate 1, a gate electrode 2 whose main ingredient is Al provided on the transparent substrate 1, a source electrode 7 provided on the transparent substrate 1, a drain electrode 8 provided on the transparent substrate 1, a silicon layer provided on the transparent substrate 1, and a pixel electrode 9 of a transparent electrode provided on the transparent substrate 1. The pixel electrode 9 (the transparent electrode) is a conductive oxide including an indium oxide, and one or two or more kinds of metal oxide selected from a first group M1 consists of W, Mo, Ni, Nb, Fe, Pt, Pd and lanthanide. The pixel electrode 9 is directly connected with at least one of the electrodes selected from a group consists of a gate electrode 2 whose main ingredient is Al, the source electrode 7 and the drain electrode 8. COPYRIGHT: (C)2006,JPO&NCIPI |
