| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device using an SiC substrate. SOLUTION: A diode is composed of a pn connection 4 comprising an n-type semiconductor region 2 formed to the SiC substrate 1 and a p<SP>+</SP>-type semiconductor region 3. A surface stabilizing film 7 for protecting the diode is formed in a region surrounding an anode electrode 5 on the surface of the SiC substrate 1. The surface stabilizing film 7 is composed of zinc based glass made of SiO<SB>2</SB>-B<SB>2</SB>O<SB>3</SB>-ZnO having a linear expansion factor at the same level as SiC and, for example, has a thick film thickness of≥1.5μm. COPYRIGHT: (C)2006,JPO&NCIPI
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