Method of manufacturing semiconductor device, acid etching resistance material and copolymer

摘要

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R¹ is a hydrogen atom or methyl group; R³ is a cyclic group selected from an alicyclic group and an aromatic group; R⁴ is a polar group; R² is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R⁵ is a hydrogen atom or methyl group).