| 摘要 |
A testing method for a semiconductor memory is disclosed. The method includes the steps of storing data in each of a plurality of memory cell blocks, electrically connecting two memory cell blocks with a sense amplifier shared by the two memory cell blocks of the plurality of memory cell blocks, sensing data of the two memory cells through the sense amplifier and determining whether the sensed data is normal based on a bit line capacitance increase according to the connection of the two memory cell blocks. The testing method can intentionally reduce an offset margin of a memory cell through increase of bit line capacitance, remove and screen an abnormal memory cell having a smaller capacitance and effectively decrease testing time.
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