ELECTRONIC ELEMENT CONTAINING FERROELECTRIC FILM AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a laminated film structure where crystallinity and orientation property are improved and polarization is efficiently performed on an electric field given to a crystal axis direction on a ferroelectric film accompanied by epitaxial growth with orientation of a semiconductor substrate as a reference, and to provide a manufacturing method of the structure and a desirable electronic element using the method.

SOLUTION: An yttrium stabilization zirconium film and a film having a rock salt structure are sequentially and epitaxially grown on the semiconductor substrate. The ferroelectric film having a simple perovskite structure is epitaxially grown. The ferroelectric film is inplane-rotated with respect to a crystal axis of yttrium stabilization zirconium by 45°. Thus, crystallinity and orientation property can be improved.

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