| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-finger NMOS transistor structure that is hardly influenced by process variation and, in addition, works as such a static electricity protective element that nearly simultaneously turns on the parasitic NPN transistors of a multi-finger NMOS transistor. SOLUTION: In the multi-finger NMOS transistor structure, a diffusion layer having conductivity which is opposite to that of a p-type semiconductor substrate is constituted to surround a NMOS transistor in a multi-finger NMOS which is the electrostatic breakage protective element of a semiconductor integrated circuit constituted on the p-type semiconductor substrate and has a plurality of gate electrodes. In addition, a surrounded p-type semiconductor region is prevented from being connected to any potential by means of a wiring means. COPYRIGHT: (C)2006,JPO&NCIPI
|
