| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of restraining the disilicide structure of an NiSi film. SOLUTION: The NiSi film 42 is formed on gate electrodes 12, 22 and source-drain regions 14, 24 of both a p-MOS transistor 10 and an n-MOS transistor 20 (silicide film forming process). Then, a direct nitride film 44 is formed on the entire surface including the NiSi film 42 (nitride film formation process). In succession, an element to raise heat resistant temperature of the NiSi film 42 is implanted into the NiSi film 42 (element implantation process). Consequently, heat resistance of the NiSi film 42 is improved, and it is possible to restrain the disilicide structure of the NiSi film 42 by a heat treatment in a later process. COPYRIGHT: (C)2006,JPO&NCIPI
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