| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-single crystal transistor integrated circuit with much more features, and also to provide its manufacturing method. SOLUTION: First, a through-hole is formed in a high polymer film 1. An electric conductivity path is established between electrodes 2 and 3 on the front and rear faces via the through-hole. Next, a gate insulation film 5 is applied and then is hardened in an oven. Then, part of polyimide is peeled off to be ready for the formation of a via. Thereafter, an organic semiconductor layer 6 is formed by the evaporation method, etc. By using a metal mask during the evaporation, the organic semiconductor layer 6 is formed only in necessary parts to perform element isolation. Finally, a source electrode 7 and a drain electrode 8 are formed to complete an organic transistor 9. After forming the integrated circuit of the organic transistor 9 as described so far, N sheets 10 (N is a natural number of 2 or larger. In Figure, N is 3), each containing the integrated circuit of the organic transistor 9, are laid on top each other and pasted together. COPYRIGHT: (C)2006,JPO&NCIPI
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