发明名称 |
Waferless automatic cleaning after barrier removal |
摘要 |
A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
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申请公布号 |
US2005233590(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040828065 |
申请日期 |
2004.04.19 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
YAO XIAOQIANG S.;YEN BI-MING;HAN TAEJOON;LOEWENHARDT PETER |
分类号 |
H01L21/00;H01L21/02;H01L21/311;H01L21/465;H01L21/768;(IPC1-7):H01L21/465 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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