发明名称 |
Manufacturing method for semiconductor device, semiconductor device and semiconductor chip |
摘要 |
A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.
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申请公布号 |
US2005230804(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050085265 |
申请日期 |
2005.03.22 |
申请人 |
TANIDA KAZUMASA;UMEMOTO MITSUO;AKIYAMA YUKIHARU |
发明人 |
TANIDA KAZUMASA;UMEMOTO MITSUO;AKIYAMA YUKIHARU |
分类号 |
H01L25/18;H01L21/70;H01L23/48;H01L25/065;H01L25/07;H01L27/00;(IPC1-7):H01L23/48 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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