摘要 |
Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor applied by an N-channel stop layer and a method for fabricating the same. The image sensor includes: a P-type semiconductor substrate including an active region provided with a field oxide layer and a pixel region provided with a photodiode region, a native N-channel metal oxide semiconductor (NMOS) transistor region and a normal NMOS transistor region; an N-channel stop layer including a wide width in a horizontal direction and formed around the field oxide layer; and a P-type well formed in a low depth on the P-type semiconductor substrate of the normal NMOS transistor region.
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