发明名称 Nonvolatile semiconductor memory device
摘要 A plurality of switches composing a voltage changing switch circuit 17 are supplied with a plurality of types of voltages, and are provided so as to correspond to a plurality of row decoders 2, such that each switch can separately select and output any of the plurality of types of voltages to the corresponding row decoder 2. Voltage boost circuits 7, 8 generate a plurality of types of voltages by boosting a power supply voltage. A regulator circuit 9 steps down at least one of the plurality of types of voltages generated by the voltage boost circuits 7, 8 to stabilize a voltage value, and outputs the resultant voltage to each switch. Each row decoder 2 selects a memory cell by using a voltage outputted from the corresponding switch. Thus, it is possible to reduce a time required for a program/program verify operation, while reducing power consumption.
申请公布号 US2005232013(A1) 申请公布日期 2005.10.20
申请号 US20050080424 申请日期 2005.03.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KAWAI KEN;MARUYAMA TAKAFUMI
分类号 G11C16/06;G11C8/08;G11C16/02;G11C16/10;G11C16/30;G11C16/34;H02M3/335;(IPC1-7):H02M3/335 主分类号 G11C16/06
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