| 摘要 |
A supporting substrate ( 10 ) having a flat supporting face is integrated with a semiconductor wafer W while supporting the surface thereof on the supporting face of the supporting substrate ( 10 ). The semiconductor wafer W integrated with the supporting substrate ( 10 ) is polished or etched on the back thereof using a thinning device and a film is formed on the back of the semiconductor wafer W integrated with the supporting substrate ( 10 ) using a film forming device ( 40 ). Since the semiconductor wafer W is integrated with the supporting substrate, even a semiconductor wafer as thin as 100 mum or less is not warped and thereby the film can be formed uniformly.
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