| 摘要 |
A thin-film capacitative element comprising a first electrode layer and a second electrode layer and, interposed therebetween, a dielectric layer constituted of a dielectric material containing a bismuth layer compound having the composition represented by the stoichiometric composition formula: (Bi2O 2)2+(Am-1BmO3m+1)2- (wherein m is a positive integer; A is at least one element selected from the group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth; and B is at least one element selected from the group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, manganese, vanadium, molybdenum and tungsten). The thin-film capacitative element of the above construction enables reduction of the layer thickness and excels in temperature compensation characteristics.
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