| 摘要 |
A thin-film capacitative element comprising a first electrode layer and a second electrode layer and, interposed therebetween, a dielectric layer constituted of a dielectric material containing a bismuth layer compound having the composition represented by the stoichiometric composition formula: (Bi2O 2)2+(Am-1BmO3m+1)2- (wherein m is a positive integer; A is at least one element selected from the group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth; and B is at least one element selected from the group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, manganese, vanadium, molybdenum and tungsten) wherein bismuth (Bi) is contained in excess of stoichiometric ratio, the bismuth excess content in terms of bismuth satisfying the inequality 0 < Bi < 0.5xm mol. The thin-film capacitative element of the above construction enables reduction of the layer thickness, can be easily produced and excels in temperature compensation characteristics.
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