METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER

摘要

A method for manufacturing an SOI wafer having an SOI layer on a buried oxide film wherein at least an oxygen ion- implanted layer is formed by implanting oxygen ions into a silicon wafer from one major surface thereof and then the silicon wafer is subjected to an oxide film forming heat treatment for transforming the oxygen ion- implanted layer into a buried oxide film is characterized in that the buried oxide film is initially formed in the silicon wafer so that its thickness is larger that the thickness of the final buried oxide film of the aimed SOI wafer and that a heat treatment is conducted on the silicon wafer having provided with the buried oxide film for reducing the thickness of the buried oxide film. With this method, a high-quality SOI wafer comprising a thin buried oxide film with high completeness and an SOI layer with extremely good crystallinity and surface quality can be manufactured through an SIMOX process.