发明名称 Diode junction poly fuse
摘要 System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.
申请公布号 US6956277(B1) 申请公布日期 2005.10.18
申请号 US20040806955 申请日期 2004.03.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WU SHIEN-YANG;CHEN SHI-BAI
分类号 H01L21/768;H01L21/82;H01L23/525;H01L29/00;H01L29/36;H01L29/74;H01L29/861;(IPC1-7):H01L29/00 主分类号 H01L21/768
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