| 摘要 |
A semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, input-output terminals, and a fuse block. A plurality of memory macros each having a plurality of memory cells is arranged on the semiconductor substrate. The insulating layer, which has a window portion, may be formed on the semiconductor substrate and covering the memory macros, the insulating layer having a window portion. The input-output terminals are arranged inline along an edge portion of the surface of the insulating layer. The input-output terminals transmit and receive signals between the memory macros and a circuit external to the semiconductor device. The fuse block is arranged in a space corresponding to the window portion in the insulating layer. The fuse block may include a plurality of fuse elements used to remedy defective portions of the plurality of memory cells in the plurality of memory macros.
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