SiGe/SOI CMOS AND METHOD OF MAKING THE SAME,申请号KR20020066211-传众专利搜索

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发明名称	SiGe/SOI CMOS AND METHOD OF MAKING THE SAME
摘要
申请公布号	KR100522275(B1)	申请公布日期	2005.10.18
申请号	KR20020066211	申请日期	2002.10.29
申请人		发明人
分类号	H01L27/08;H01L27/092;H01L21/20;H01L21/324;H01L21/336;H01L21/8238;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/092	主分类号	H01L27/08
代理机构		代理人
主权项
地址

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