发明名称 Semiconductor device, radiation detection device, and radiation detection system
摘要 By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg 4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg 4 , the gate line Vg 4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg 4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.
申请公布号 US6956216(B2) 申请公布日期 2005.10.18
申请号 US20010879214 申请日期 2001.06.13
申请人 CANON KABUSHIKI KAISHA 发明人 ISHII TAKAMASA;MOCHIZUKI CHIORI
分类号 H01L27/146;(IPC1-7):H01L27/14;G01T1/24 主分类号 H01L27/146
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