发明名称 |
Method and apparatus for gas temperature control in a semiconductor processing system |
摘要 |
A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing chamber and a gas source. An enclosure substantially encloses the gas delivery line and is adapted to flow a heat transfer fluid away from the processing chamber. |
申请公布号 |
US6955211(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20020197683 |
申请日期 |
2002.07.17 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KU VINCENT W.;CHEN LING;WU DIEN-YEH;OUYE ALAN H.;WYSOK IRENA |
分类号 |
F28D7/10;H01L21/00;(IPC1-7):F25B29/00 |
主分类号 |
F28D7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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