发明名称 Method and apparatus for gas temperature control in a semiconductor processing system
摘要 A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing chamber and a gas source. An enclosure substantially encloses the gas delivery line and is adapted to flow a heat transfer fluid away from the processing chamber.
申请公布号 US6955211(B2) 申请公布日期 2005.10.18
申请号 US20020197683 申请日期 2002.07.17
申请人 APPLIED MATERIALS, INC. 发明人 KU VINCENT W.;CHEN LING;WU DIEN-YEH;OUYE ALAN H.;WYSOK IRENA
分类号 F28D7/10;H01L21/00;(IPC1-7):F25B29/00 主分类号 F28D7/10
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