发明名称 |
Method of manufacturing a semiconductor device having thin film transistor and capacitor |
摘要 |
A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a storage capacitor of a pixel region that has a structure of a first storage capacitor and a second storage capacitor stacked on top of the other and connected in parallel with each other. The method further includes steps for forming the first storage capacitor having a first capacitance electrode formed in the same layer as a drain region, a first dielectric, and a second capacitance electrode formed in the same layer as a gate wiring. Still further, the method includes steps for forming the second storage capacitor including the second capacitance electrode, a second dielectric, and a third capacitance electrode formed in the same layer as a light-shielding film.
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申请公布号 |
US6955953(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20030603019 |
申请日期 |
2003.06.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;IKEDA TAKAYUKI;FUKUNAGA TAKESHI |
分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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