发明名称 |
Repair of address-specific leakage |
摘要 |
An integrated circuit having a DRAM array connected to a power supply is tested for excessive current draw by selectively applying voltage to a single wordline or bitline, measuring current drawn, comparing the result with a reference number representing acceptable leakage, and replacing columns of the array having excessive leakage, thereby identifying and repairing latent defects that may become a cause of failure.
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申请公布号 |
US6957372(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20020228152 |
申请日期 |
2002.08.26 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
BARTH, JR. JOHN EDWARD;PARRIES PAUL CHRISTIAN;ROBSON NORMAN WHITELAW |
分类号 |
G11C11/4074;G11C29/00;G11C29/02;(IPC1-7):G06F11/00 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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