发明名称 |
Marking of and searching for initial defective blocks in semiconductor memory |
摘要 |
A method of marking an initial defective block in a semiconductor memory device having a memory area thereof divided into a plurality of blocks and provided with an ECC function includes the steps of detecting an initial defective block; and writing an ECC code causing an ECC error in a predetermined area of the initial defective block.
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申请公布号 |
US6957377(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20010911375 |
申请日期 |
2001.07.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
FURUKAWA HIDEYUKI |
分类号 |
G06F12/16;G06F11/10;G11C16/02;G11C16/06;G11C29/04;G11C29/42;G11C29/44;H01L21/822;H01L27/04;(IPC1-7):G11C29/00;G11B20/20;G06F11/00 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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