发明名称 Marking of and searching for initial defective blocks in semiconductor memory
摘要 A method of marking an initial defective block in a semiconductor memory device having a memory area thereof divided into a plurality of blocks and provided with an ECC function includes the steps of detecting an initial defective block; and writing an ECC code causing an ECC error in a predetermined area of the initial defective block.
申请公布号 US6957377(B2) 申请公布日期 2005.10.18
申请号 US20010911375 申请日期 2001.07.25
申请人 FUJITSU LIMITED 发明人 FURUKAWA HIDEYUKI
分类号 G06F12/16;G06F11/10;G11C16/02;G11C16/06;G11C29/04;G11C29/42;G11C29/44;H01L21/822;H01L27/04;(IPC1-7):G11C29/00;G11B20/20;G06F11/00 主分类号 G06F12/16
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