发明名称 |
Light emitting diodes with graded composition active regions |
摘要 |
A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
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申请公布号 |
US6955933(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20010912589 |
申请日期 |
2001.07.24 |
申请人 |
LUMILEDS LIGHTING U.S., LLC |
发明人 |
BOUR DAVID P.;GARDNER NATHAN F.;GOETZ WERNER K.;STOCKMAN STEPHEN A.;TAKEUCHI TETSUYA;HASNAIN GHULAM;KOCOT CHRISTOPHER P.;HUESCHEN MARK R. |
分类号 |
H01L33/06;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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