发明名称 |
Scanning probe based lithographic alignment |
摘要 |
The lithographic process described herein involves aligning a patterned mold with respect to an alignment mark that is disposed on a substrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned mold may be aligned to an atomic accuracy (e.g., on the order of 10 nm or less), enabling nanometer-scale devices to be fabricated. A device formed by this lithographic method and a system for implementing this lithographic method with alignment also are described.
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申请公布号 |
US6955767(B2) |
申请公布日期 |
2005.10.18 |
申请号 |
US20010815913 |
申请日期 |
2001.03.22 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, LP. |
发明人 |
CHEN YONG |
分类号 |
G03F7/00;G03F9/00;H01L21/027;(IPC1-7):B44C1/22 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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