发明名称 |
Vertical-cavity surface emitting laser diode |
摘要 |
The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror is formed therewithin. According to the present invention, light beams emitting from the active layer will not be shielded by a central electrode and brightness of the laser diode is improved.
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申请公布号 |
US2005226299(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050147760 |
申请日期 |
2005.06.08 |
申请人 |
NATIONAL CHUNG-HSING UNIVERSITY |
发明人 |
HORNG RAY-HUA;WU DONG-SING |
分类号 |
H01L21/00;H01S5/00;H01S5/02;H01S5/024;H01S5/042;H01S5/183;H01S5/20;H01S5/22;(IPC1-7):H01S5/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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