发明名称 |
Dual-oxide transistors for the improvement of reliability and off-state leakage |
摘要 |
The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate.
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申请公布号 |
US2005224840(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050149049 |
申请日期 |
2005.06.08 |
申请人 |
ALTERA CORPORATION |
发明人 |
MCELHENY PETER J.;LIU YOWJUANG (. |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L29/423;H01L29/78;H01L31/036;(IPC1-7):H01L31/036 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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