| 摘要 |
A memory cell configuration includes a magnetoresistive element with an annular cross-section in a layer plane, a first line and a second line. The first and second lines crossing each other. The magnetoresistive element is disposed in the crossing region between the first line and the second line. The first line and/or the second line include at least one first portion, in which the predominant current component is oriented parallel to the layer plane, and one second portion, in which the predominant current component is oriented perpendicular to the layer plane. |
