SEMICONDUCTOR NONVOLATILE STORAGE CIRCUIT

摘要

A semiconductor nonvolatile storage circuit that inhibits any pseudo-writing into storing/holding FET transistors so as to realize a stable storing/holding operation. The semiconductor nonvolatile storage circuit comprises a first FET transistor (MNM1) forming a source-drain path between a ground potential (GND) and a bit line (BL); a second FET transistor (MNM2) forming a source-drain path between the ground potential (GND) and a differential pair line (BL_); a third FET transistor (MNM3) opening/closing the connection between the drain terminal of the first FET transistor (MNM1) and the bit line (BL); and a fourth FET transistor (MNM4) opening/closing the connection between the drain terminal of the second FET transistor (MNM2) and the differential pair line (BL_).