| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution for metal with high flatness which excels in microfabrication, film thinning, dimensional precision, and electrical characteristics, and applies preferably to a semiconductor device at low cost with high reliability, and to provide a polishing method using the polishing solution for metal. <P>SOLUTION: The polishing method for polishing a film to be polished is performed by moving a polishing plate and a substrate relatively in the state where the substrate having the film to be polished is pressed to a polishing cloth, while using and supplying the polishing solution for metal which contains a benzene ring compound, an oxidized metal solvent, and water. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
