| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an IGBT (Insulated Gate Bipolar Transistor) element is disposed between a pair of heatsinks at its both sides and the nearly entire structure is molded with molding resin, and which can realize an inexpensive arrangement. <P>SOLUTION: A semiconductor device S1 comprises an IGBT element 10, a lower side heatsink 20 provided on one surface of the IGBT element 10 and functioning as an electrode and also as a heat radiator, an upper side heatsink 30 provided on the other surface of the IGBT element 10 and functioning as an electrode and also as a heat radiator, and a mold resin 80 for sealing the IGBT element 10 and the both heatsinks 20, 30 so as to envelop them. Two of such IGBT elements 10 are provided next to each other. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
