| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal in an improved productivity, which is capable of separating the silicon single crystal under the lifting with no dislocation, from a silicon melted liquid, namely, which makes it possible to separate with a high probability the silicon single crystal in the state of no dislocation from the silicon melted liquid without forming a tail part, and furthermore, which enables yield improvement and reduction in a working load. SOLUTION: This method for manufacturing the silicon single crystal by the Czochralski method, comprises growing the regular diameter part of a silicon single crystal, thereafter once slowing down the lifting speed at a time of growing the regular diameter part, then separating the silicon single crystal from the melted liquid by increasing again the lifting speed as well as by decreasing the crucible lifting speed. COPYRIGHT: (C)2006,JPO&NCIPI
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