Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

摘要

A dielectric film containing HfO₂/ZrO₂ nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO₂. A gate dielectric is formed by atomic layer deposition of HfO₂ using a HfI₄ precursor followed by the formation of ZrO₂ on the HfO₂ layer.