发明名称 METHOD FOR CLEANING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To remove the contamination of a wafer back face without deteriorating the components of a cleaning device such as a nozzle to be used for cleaning the wafer back face, by cleaning the wafer back face by using chemical which does not generate heat even when it is mixed with water at the time of carrying out resist peeling and cleaning in a sheet type cleaning device. SOLUTION: At the time of carrying out the resist peeling and cleaning of a semiconductor wafer by a sheet type cleaning device, the back face of the wafer is cleaned by using chemical which does not generate heat even when it is mixed with water. In this case, solution obtained by mixing aqueous ammonia and oxygenated water which is alkali system chemical and water, or solution constituted of dilution aqueous ammonia or potassium hydroxide solution may be used as chemical. Also, solution obtained by mixing chlorine and oxygenated water which is acid system chemical and water, or solution obtained by mixing hydrogen fluoride, hydrogen chloride, oxygenated water and water or solution obtained by mixing hydrogen fluoride, oxygenated water and water may be used as chemical. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005285989(A) 申请公布日期 2005.10.13
申请号 JP20040095874 申请日期 2004.03.29
申请人 SONY CORP 发明人 OKUYAMA ATSUSHI;ASADA KAZUMI;ABE HITOSHI;IWAMOTO ISATO
分类号 H01L21/027;H01L21/304;(IPC1-7):H01L21/027 主分类号 H01L21/027
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