METHOD AND APPARATUS FOR FABRICATION OF METAL-OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES

摘要

A method of forming a semiconductor device, the method comprising sequentially forming on a semiconductor substrate (10), a gate structure (14) including a gate electrode layer (15) forming an upper surface of said gate structure, performing heavy impurity doping in portions (126) of said semiconductor substrate (10) not covered by said gate structure (14) to partially form source and drain regions of said semiconductor device, removing in a single step a first layer of substantially uniform thickness from the upper surface and sidewalls of said gate structure (14), performing light impurity doping in portions (124) of said semiconductor substrate (10) not covered by said gate structure (14) to complete said source and drain regions of said semiconductor device, removing in a single step a second layer of substantially uniform thickness from the upper surface and sidewalls of said gate structure (14), forming a spacer layer (125) on the sidewalls of said gate structure (14) and forming a silicide contact (28) on the upper surface of said gate structure (14).