发明名称 |
METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY ELEMENT |
摘要 |
<p>Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.</p> |
申请公布号 |
KR20050099589(A) |
申请公布日期 |
2005.10.13 |
申请号 |
KR20040024741 |
申请日期 |
2004.04.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JOON SANG;HONG, CHANG KI;KIM, SANG YONG |
分类号 |
H01L27/115;G11B7/24;H01L21/302;H01L21/311;H01L21/461;H01L27/24;H01L45/00;(IPC1-7):H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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