发明名称 |
SEMICONDUCTOR DEVICES HAVING A FIELD EFFECT TRANSISTOR AND METHODS OF FABRICATING THE SAME |
摘要 |
<p>A semiconductor device having a field effect transistor and a method of forming the same are provided. The semiconductor device preferably includes a device active pattern disposed on a predetermined region of the substrate. The gate electrode preferably crosses over the device active pattern, interposed by a gate insulation layer. A support pattern is preferably interposed between the device active pattern and the substrate. The support pattern can be disposed under the gate electrode. A filling insulation pattern is preferably disposed between the device active pattern and the filling insulation pattern. The filling insulation pattern may be disposed under the source/drain region. A device active pattern under the gate electrode is preferably formed of a strained silicon having a lattice width wider than a silicon lattice.</p> |
申请公布号 |
KR20050099328(A) |
申请公布日期 |
2005.10.13 |
申请号 |
KR20040024599 |
申请日期 |
2004.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, CHANG WOO;PARK, DONG GUN;KIM, DONG WON;CHOE, JEONG DONG |
分类号 |
H01L29/78;H01L21/336;H01L21/8234;H01L29/06;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|