发明名称 ORGANIC FIELD EFFECT TRANSISTOR, FLAT DISPLAY DEVICE COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THE ORGANIC FIELD EFFECT TRANSISTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an organic field effect transistor, a flat display device comprising the same, and a method for manufacturing the organic field effect transistor. <P>SOLUTION: The organic field effect transistor comprises a substrate 110, a source electrode 120, and a drain electrode 160 arranged on the substrate 110, an organic semiconductor layer 130 arranged between the source electrode 120 and the drain electrode 160, a gate electrode 150 arranged in the region of the organic semiconductor layer 130, and a charge carrier filter layer 140 arranged between the gate electrode 150 and the organic semiconductor layer 130, wherein the charge carrier filter layer 140 includes a semiconductor material. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005286329(A) 申请公布日期 2005.10.13
申请号 JP20050086840 申请日期 2005.03.24
申请人 SAMSUNG SDI CO LTD 发明人 REHDECKER MICHAEL;FISCHER JOERG;MATHEA ARTHUR
分类号 H01L21/28;G09F9/30;H01L21/00;H01L21/316;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L35/24;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/786 主分类号 H01L21/28
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