INTEGRATED CIRCUIT DEVICE, MANUFACTURING METHOD THEREFOR, AND FORMING METHOD FOR VANADIUM OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a integrated circuit device having a vanadium oxide film that has no damage as a resistance body used for a temperature sensor, a manufacturing method for an integrated circuit device that can be formed without damaging the resistance body made up of vanadium oxide, and a forming method for a vanadium oxide film. SOLUTION: A vanadium oxide film is formed on an interlayer insulation film 4, and a silicon oxide film and a silicon nitride film are formed on its top in this order. Then, using a resist pattern as a mask, the silicon nitride film is patterned . After that, the resist pattern is removed by using a resist stripper or oxygen plasma ashing. Next, using the patterned silicon nitride film 14 as a mask, the silicon oxide film and vanadium oxide film are etched to form a resistor film 9 made of vanadium oxide. COPYRIGHT: (C)2006,JPO&NCIPI