| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress the penetration of boron into a substrate while suppressing an increase in thickness of a base interface layer and can reduce dopants in a gate insulation film. SOLUTION: After forming a silicon oxide film and a metal silicificated film on a silicon substrate in order, the substrate is heat-treated in an atmosphere containing active oxygen to remove impurities contained in the silicon oxide film and the metal silicificated film. Next, in an inert gas, the substrate is heat-treated at a temperature of≥500°C and not more than a crystallization temperature of the metal silicificated film to cause the silicon oxide film and the metal silicificated film to become a more coherent mass. Thereafter, the substrate is heat-treated at a temperature of≥500°C and not more than the crystallization temperature of the metal silicificated film in an ammonia-contained atmosphere to turn the metal silicificated film into a metal silicate nitride film. By the treatment for causing the films to become a more coherent mass, a quantity of nitrogen penetrating into the metal silicificated film can be reduced, resulting in preventing the silicon oxide film from nitriding and gaining thickness. COPYRIGHT: (C)2006,JPO&NCIPI
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