| 发明名称 |
Method for producing semiconductor device |
| 摘要 |
A method for producing a semiconductor device includes the steps of forming a trench for device isolation on a silicon substrate; and annealing the silicon substrate in an atmosphere containing a noble gas at any step after the growth of a buried oxide film until the growth of a gate polysilicon.
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| 申请公布号 |
US2005227452(A1) |
申请公布日期 |
2005.10.13 |
| 申请号 |
US20050103613 |
申请日期 |
2005.04.12 |
| 申请人 |
ELPIDA MEMORY, INC |
发明人 |
OHASHI TAKUO;SUWA TAKESHI;KUBOTA TAISHI |
| 分类号 |
H01L21/76;H01L21/28;H01L21/316;H01L21/324;H01L21/762;H01L29/78;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/76 |
| 代理机构 |
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