| 摘要 |
A semiconductor memory device includes a word drive line, and a word line connected with memory cells. A first drive circuit drives the word drive line to a first voltage based on a main word signal, and resets the word drive line to a ground voltage in a time period for transition of an address signal. A second drive circuit outputs a signal of the first voltage to the word line based on a sub-word signal such that a data is read out from one of the memory cells. The main word signal and the sub-word signal are obtained from an address signal, and are signals taking the ground voltage or a second voltage which is lower than the first voltage.
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